Vishay Si2377EDS Type P-Channel MOSFET, 3.5 A, 20 V Enhancement, 3-Pin SOT-23 SI2377EDS-T1-GE3
- RS庫存編號:
- 165-6912
- 製造零件編號:
- SI2377EDS-T1-GE3
- 製造商:
- Vishay
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
查看批量定價選項小計（1 卷，共 3000 件）*
HK$4,785.00
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單位 | 每單位 | 每卷* |
|---|---|---|
| 3000 - 12000 | HK$1.595 | HK$4,785.00 |
| 15000 + | HK$1.563 | HK$4,689.00 |
* 參考價格
- RS庫存編號:
- 165-6912
- 製造零件編號:
- SI2377EDS-T1-GE3
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 3.5A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Series | Si2377EDS | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 165mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 14nC | |
| Maximum Gate Source Voltage Vgs | -8V, +8V | |
| Forward Voltage Vf | 800mV | |
| Maximum Power Dissipation Pd | 1.8W | |
| Maximum Operating Temperature | 150°C | |
| Length | 3.04mm | |
| Standards/Approvals | No | |
| Width | 1.4mm | |
| Height | 1.02mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 3.5A | ||
Maximum Drain Source Voltage Vds 20V | ||
Series Si2377EDS | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 165mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 14nC | ||
Maximum Gate Source Voltage Vgs -8V, +8V | ||
Forward Voltage Vf 800mV | ||
Maximum Power Dissipation Pd 1.8W | ||
Maximum Operating Temperature 150°C | ||
Length 3.04mm | ||
Standards/Approvals No | ||
Width 1.4mm | ||
Height 1.02mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
P-Channel MOSFET, 8V to 20V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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