Vishay TrenchFET N-Channel MOSFET, 58 A, 30 V Enhancement, 8-Pin SO-8 SIRA14DP-T1-GE3
- RS庫存編號:
- 165-6980
- 製造零件編號:
- SIRA14DP-T1-GE3
- 製造商:
- Vishay
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- RS庫存編號:
- 165-6980
- 製造零件編號:
- SIRA14DP-T1-GE3
- 製造商:
- Vishay
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 58A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | TrenchFET | |
| Package Type | SO-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 8.5mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | -16V, +20V | |
| Forward Voltage Vf | 0.76V | |
| Maximum Power Dissipation Pd | 31.2W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 19.4nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Width | 5.26mm | |
| Height | 1.12mm | |
| Length | 6.25mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 58A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series TrenchFET | ||
Package Type SO-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 8.5mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs -16V, +20V | ||
Forward Voltage Vf 0.76V | ||
Maximum Power Dissipation Pd 31.2W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 19.4nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Width 5.26mm | ||
Height 1.12mm | ||
Length 6.25mm | ||
Automotive Standard No | ||
N-Channel MOSFET, TrenchFET Gen IV, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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