N-Channel MOSFET, 58 A, 30 V, 8-Pin PowerPAK SO-8 Vishay SIRA14DP-T1-GE3

RS庫存編號:: 165-6980
製造零件編號:: SIRA14DP-T1-GE3
製造商:: Vishay

N-Channel MOSFET, 58 A, 30 V, 8-Pin PowerPAK SO-8 Vishay SIRA14DP-T1-GE3

此圖片僅供參考，請參閲產品詳細資訊及規格

3000 現貨庫存，可於3工作日發貨。

單價个（每带 3000 ）

HK$1.965

單位	每單位	每卷*
3000 - 12000	HK$1.965	HK$5,895.00
15000 +	HK$1.926	HK$5,778.00

* 參考價格

RS庫存編號:: 165-6980
製造零件編號:: SIRA14DP-T1-GE3
製造商:: Vishay

SiRA14DP, N-Channel 30V (Drain-Source) MOSFET Data Sheet
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	58 A
Maximum Drain Source Voltage	30 V
Package Type	PowerPAK SO-8
Series	TrenchFET
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	8.5 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	1.1V
Maximum Power Dissipation	31.2 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-16 V, +20 V
Number of Elements per Chip	1
Width	5.26mm
Length	6.25mm
Maximum Operating Temperature	+150 °C
Transistor Material	Si
Typical Gate Charge @ Vgs	19.4 nC @ 10 V
Minimum Operating Temperature	-55 °C
Height	1.12mm

N-Channel MOSFET, 58 A, 30 V, 8-Pin PowerPAK SO-8 Vishay SIRA14DP-T1-GE3

N-Channel MOSFET, TrenchFET Gen IV, Vishay Semiconductor