Vishay Si1012CR N-Channel MOSFET, 630 mA, 20 V Enhancement, 3-Pin SC-75 SI1012CR-T1-GE3
- RS庫存編號:
- 165-7259
- 製造零件編號:
- SI1012CR-T1-GE3
- 製造商:
- Vishay
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可享批量折扣
查看批量定價選項小計（1 卷，共 3000 件）*
HK$2,631.00
訂單超過 HK$250.00 免費送貨
暫時缺貨
- 從 2027年11月18日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 3000 - 12000 | HK$0.877 | HK$2,631.00 |
| 15000 + | HK$0.86 | HK$2,580.00 |
* 參考價格
- RS庫存編號:
- 165-7259
- 製造零件編號:
- SI1012CR-T1-GE3
- 製造商:
- Vishay
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 630mA | |
| Maximum Drain Source Voltage Vds | 20V | |
| Series | Si1012CR | |
| Package Type | SC-75 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.1Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | -8V, +8V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 240mW | |
| Typical Gate Charge Qg @ Vgs | 1.3nC | |
| Forward Voltage Vf | 800mV | |
| Maximum Operating Temperature | 150°C | |
| Height | 800μm | |
| Width | 860μm | |
| Standards/Approvals | No | |
| Length | 1.68mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 630mA | ||
Maximum Drain Source Voltage Vds 20V | ||
Series Si1012CR | ||
Package Type SC-75 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.1Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs -8V, +8V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 240mW | ||
Typical Gate Charge Qg @ Vgs 1.3nC | ||
Forward Voltage Vf 800mV | ||
Maximum Operating Temperature 150°C | ||
Height 800μm | ||
Width 860μm | ||
Standards/Approvals No | ||
Length 1.68mm | ||
Automotive Standard No | ||
N-Channel MOSFET, 8V to 25V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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