onsemi 2N7002KW N-Channel MOSFET, 300 mA, 60 V Enhancement, 3-Pin SOT-23 2N7002KW
- RS庫存編號:
- 166-2856
- 製造零件編號:
- 2N7002KW
- 製造商:
- onsemi
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
查看批量定價選項小計（1 卷，共 3000 件）*
HK$1,911.00
库存信息目前无法访问 - 请稍候查看
單位 | 每單位 | 每卷* |
|---|---|---|
| 3000 - 3000 | HK$0.637 | HK$1,911.00 |
| 6000 - 9000 | HK$0.618 | HK$1,854.00 |
| 12000 + | HK$0.599 | HK$1,797.00 |
* 參考價格
- RS庫存編號:
- 166-2856
- 製造零件編號:
- 2N7002KW
- 製造商:
- onsemi
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 300mA | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | 2N7002KW | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 4.8Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 0.55nC | |
| Maximum Power Dissipation Pd | 350mW | |
| Maximum Gate Source Voltage Vgs | -20V, +20V | |
| Forward Voltage Vf | 1.1V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.2mm | |
| Length | 2.92mm | |
| Width | 1.3mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 300mA | ||
Maximum Drain Source Voltage Vds 60V | ||
Series 2N7002KW | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 4.8Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 0.55nC | ||
Maximum Power Dissipation Pd 350mW | ||
Maximum Gate Source Voltage Vgs -20V, +20V | ||
Forward Voltage Vf 1.1V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Height 1.2mm | ||
Length 2.92mm | ||
Width 1.3mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor
Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
相关链接
- onsemi 2N7002KW N-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23 2N7002KW
- onsemi 2N7002K N-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23 2N7002K
- onsemi N-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23 NTR5198NLT1G
- onsemi 2V7002K N-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23 2V7002KT1G
- onsemi MMBF170L N-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23 MMBF170LT1G
- onsemi 2N7002K N-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23 2N7002KT1G
- onsemi 2N7002L N-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23 2N7002LT1G
- onsemi 2N7002L N-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23 2N7002LT3G