N-Channel MOSFET, 4.1 A, 800 V, 3-Pin TO-220AB Vishay IRFBE30PBF

RS庫存編號:: 178-0818
製造零件編號:: IRFBE30PBF
製造商:: Vishay

N-Channel MOSFET, 4.1 A, 800 V, 3-Pin TO-220AB Vishay IRFBE30PBF

此圖片僅供參考，請參閲產品詳細資訊及規格

436 現貨庫存，可於3工作日發貨。

單價毎管：50 个

HK$13.832

單位	每單位	Per Tube*
50 - 50	HK$13.832	HK$691.60
100 - 150	HK$13.531	HK$676.55
200 +	HK$13.23	HK$661.50

* 參考價格

RS庫存編號:: 178-0818
製造零件編號:: IRFBE30PBF
製造商:: Vishay

Datasheet

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	4.1 A
Maximum Drain Source Voltage	800 V
Package Type	TO-220AB
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	3 Ω
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	125 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Maximum Operating Temperature	+150 °C
Typical Gate Charge @ Vgs	78 nC @ 10 V
Transistor Material	Si
Length	10.41mm
Width	4.7mm
Number of Elements per Chip	1
Minimum Operating Temperature	-55 °C
Height	9.01mm

N-Channel MOSFET, 4.1 A, 800 V, 3-Pin TO-220AB Vishay IRFBE30PBF

N-Channel MOSFET, 600V to 1000V, Vishay Semiconductor