Vishay IRF710 N-Channel Power MOSFET, 1.2 A, 400 V Enhancement, 3-Pin TO-220AB IRF710PBF
- RS庫存編號:
- 178-0855
- 製造零件編號:
- IRF710PBF
- 製造商:
- Vishay
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
查看批量定價選項小計（1 管，共 50 件）*
HK$445.10
訂單超過 HK$250.00 免費送貨
有庫存
- 1,200 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每管* |
|---|---|---|
| 50 - 200 | HK$8.902 | HK$445.10 |
| 250 + | HK$8.012 | HK$400.60 |
* 參考價格
- RS庫存編號:
- 178-0855
- 製造零件編號:
- IRF710PBF
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Channel Type | N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 1.2A | |
| Maximum Drain Source Voltage Vds | 400V | |
| Package Type | TO-220AB | |
| Series | IRF710 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3.6Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 36W | |
| Typical Gate Charge Qg @ Vgs | 17nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.6V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 150°C | |
| Width | 4.7mm | |
| Standards/Approvals | RoHS | |
| Height | 9.01mm | |
| Length | 10.41mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Channel Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 1.2A | ||
Maximum Drain Source Voltage Vds 400V | ||
Package Type TO-220AB | ||
Series IRF710 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3.6Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 36W | ||
Typical Gate Charge Qg @ Vgs 17nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.6V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 150°C | ||
Width 4.7mm | ||
Standards/Approvals RoHS | ||
Height 9.01mm | ||
Length 10.41mm | ||
Automotive Standard No | ||
Vishay IRF710 Series Power MOSFET, 400V Drain Source Voltage, 36W Power Dissipation - IRF710PBF
This power MOSFET is a high-voltage, N-channel device intended for switching and amplification duties in through-hole power designs. It operates reliably across a wide thermal span and is supplied in a commonly used TO-220AB package, making it suitable for integration into discrete power stages where robust voltage handling is required.
Features and Benefits:
• 400V drain voltage enabling high-voltage switching capability
• 36W maximum dissipation supporting moderate power handling
• 3.6Ω on-resistance minimises conduction losses where currents are low
• 1.2A continuous drain current for sustained light-load operation
• 17nC typical gate charge for predictable switching performance
• ±20V gate tolerance allowing standard gate-drive voltages
• 36W maximum dissipation supporting moderate power handling
• 3.6Ω on-resistance minimises conduction losses where currents are low
• 1.2A continuous drain current for sustained light-load operation
• 17nC typical gate charge for predictable switching performance
• ±20V gate tolerance allowing standard gate-drive voltages
Applications
• Suitable for mains-linked switch-mode power supplies
• Ideal for inverter front-end and high-voltage regulators
• Used with discrete transistor stages in hobbyist and service repairs
• Can be used for snubber or clamp circuits in protection networks
• Suitable for through-hole prototypes and repair replacements
• Ideal for inverter front-end and high-voltage regulators
• Used with discrete transistor stages in hobbyist and service repairs
• Can be used for snubber or clamp circuits in protection networks
• Suitable for through-hole prototypes and repair replacements
What thermal range can I expect during operation?
The device is rated to function from -55°C up to 150°C, accommodating environments from sub-zero storage to elevated operating conditions.
How should I mount it for effective heat dissipation?
The through-hole TO-220AB package permits fastening to a heatsink or chassis using the mounting tab to improve thermal transfer and maintain junction temperatures.
What gate-drive considerations are necessary for switching?
Drive voltages must remain within ±20V
the 17nC gate charge helps estimate driver current requirements for desired switching speeds.
Is this component suitable for automotive applications?
It is not specified for automotive standards, so it should be avoided where automotive qualification is required.
相关链接
- Vishay IRF710 Type N-Channel Power MOSFET 400 V Enhancement, 3-Pin TO-220AB IRF710PBF
- Vishay IRF Type N-Channel Power MOSFET 400 V Enhancement, 3-Pin TO-220AB IRF720PBF
- Vishay IRF740A Type N-Channel Power MOSFET 400 V Enhancement, 3-Pin TO-220AB IRF740APBF
- Vishay IRF740 Type N-Channel Power MOSFET 400 V Enhancement, 3-Pin TO-220AB IRF740PBF
- Vishay IRF740LC Type N-Channel Power MOSFET 400 V Enhancement, 3-Pin TO-220AB IRF740LCPBF
- Vishay D Series Type N-Channel Power MOSFET 400 V Enhancement, 3-Pin TO-220AB SIHP6N40D-GE3
- Vishay Type N-Channel MOSFET 400 V TO-220AB SIHP25N40D-GE3
- Infineon HEXFETPower MOSFET Type N-Channel MOSFET 24 V Enhancement, 3-Pin TO-220AB IRF1324PBF