P-Channel MOSFET, 100 A, 30 V, 3-Pin DPAK Vishay Siliconix SQD40031EL_GE3
- RS庫存編號:
- 178-3950
- 製造零件編號:
- SQD40031EL_GE3
- 製造商:
- Vishay Siliconix
1290 現貨庫存，可於3工作日發貨。
單價 个（每托盘 10 ）
HK$10.083
單位 | 每單位 | 每包* |
|---|---|---|
| 10 - 490 | HK$10.083 | HK$100.83 |
| 500 - 990 | HK$9.832 | HK$98.32 |
| 1000 + | HK$9.682 | HK$96.82 |
* 參考價格
- RS庫存編號:
- 178-3950
- 製造零件編號:
- SQD40031EL_GE3
- 製造商:
- Vishay Siliconix
產品概覽和技術數據資料表
法例與合規
不適用
- COO (Country of Origin):
- TW
產品詳細資訊
TrenchFET® power MOSFET
Package with low thermal resistance
Package with low thermal resistance
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
規格
Attribute | Value |
|---|---|
| Channel Type | P |
| Maximum Continuous Drain Current | 100 A |
| Maximum Drain Source Voltage | 30 V |
| Series | TrenchFET |
| Package Type | DPAK (TO-252) |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 5 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 2.5V |
| Minimum Gate Threshold Voltage | 1.5V |
| Maximum Power Dissipation | 136 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | ±20 V |
| Width | 2.38mm |
| Number of Elements per Chip | 1 |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 186 nC @ 10 V |
| Length | 6.73mm |
| Maximum Operating Temperature | +175 °C |
| Forward Diode Voltage | 1.5V |
| Height | 6.22mm |
| Minimum Operating Temperature | -55 °C |