Vishay TrenchFET N-Channel MOSFET, 30 A, 40 V Enhancement, 3-Pin TO-252 SQD40052EL_GE3
- RS庫存編號:
- 228-2948
- 製造零件編號:
- SQD40052EL_GE3
- 製造商:
- Vishay
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
查看批量定價選項小計（1 包，共 10 件）*
HK$83.60
訂單超過 HK$250.00 免費送貨
最後的 RS 庫存
- 最終 1,680 個，準備發貨
單位 | 每單位 | 每包* |
|---|---|---|
| 10 - 40 | HK$8.36 | HK$83.60 |
| 50 - 90 | HK$8.12 | HK$81.20 |
| 100 - 240 | HK$7.88 | HK$78.80 |
| 250 - 990 | HK$7.63 | HK$76.30 |
| 1000 + | HK$7.39 | HK$73.90 |
* 參考價格
- RS庫存編號:
- 228-2948
- 製造零件編號:
- SQD40052EL_GE3
- 製造商:
- Vishay
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 30A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | TO-252 | |
| Series | TrenchFET | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 6mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 34.5nC | |
| Maximum Power Dissipation Pd | 62W | |
| Forward Voltage Vf | 0.83V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | AEC-Q101 | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 30A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type TO-252 | ||
Series TrenchFET | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 6mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 34.5nC | ||
Maximum Power Dissipation Pd 62W | ||
Forward Voltage Vf 0.83V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals AEC-Q101 | ||
Automotive Standard AEC-Q101 | ||
The Vishay TrenchFET automotive N-channel is 40 V power MOSFET.
100 % Rg and UIS tested
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