Vishay Dual TrenchFET 2 Type P, Type N-Channel MOSFET, 4 A, 20 V Enhancement, 8-Pin TSOP SI5515CDC-T1-GE3
- RS庫存編號:
- 180-7304
- 製造零件編號:
- SI5515CDC-T1-GE3
- 製造商:
- Vishay
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
查看批量定價選項小計（1 卷，共 3000 件）*
HK$9,201.00
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單位 | 每單位 | 每卷* |
|---|---|---|
| 3000 - 3000 | HK$3.067 | HK$9,201.00 |
| 6000 - 9000 | HK$2.975 | HK$8,925.00 |
| 12000 + | HK$2.886 | HK$8,658.00 |
* 參考價格
- RS庫存編號:
- 180-7304
- 製造零件編號:
- SI5515CDC-T1-GE3
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Channel Type | Type P, Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 4A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | TSOP | |
| Series | TrenchFET | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.156 | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 7.5nC | |
| Maximum Gate Source Voltage Vgs | 8V | |
| Maximum Power Dissipation Pd | 3.1W | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Dual | |
| Width | 1.65mm | |
| Length | 3.05mm | |
| Standards/Approvals | No | |
| Height | 1mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Channel Type Type P, Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 4A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type TSOP | ||
Series TrenchFET | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.156 | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 7.5nC | ||
Maximum Gate Source Voltage Vgs 8V | ||
Maximum Power Dissipation Pd 3.1W | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Dual | ||
Width 1.65mm | ||
Length 3.05mm | ||
Standards/Approvals No | ||
Height 1mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Vishay MOSFET
The Vishay surface mount dual channel (both P and N-channels) MOSFET is a new age product with a drain-source voltage of 20V and drain-source resistance of 36mohm at a gate-source voltage of 4.5V. It has a maximum power rating of 3.1W. The MOSFET has a continuous drain current of 4A. It has application in load switches for portable devices. MOSFET has been optimized, for lower switching and conduction losses.
Features and Benefits
• Halogen free
• Lead (Pb) free
• Operating temperature ranges between -55°C and 150°C
• TrenchFET power MOSFET
Certifications
• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
• IEC 61249-2-21
• Rg tested
相关链接
- Vishay Dual TrenchFET 2 Type P 4 A 8-Pin TSOP SI5515CDC-T1-GE3
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