Vishay TrenchFET Type P-Channel MOSFET, 520 mA, 150 V Enhancement, 6-Pin SOT-363 SI1411DH-T1-GE3

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小計(1 包,共 20 件)*

HK$89.90

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20 - 740HK$4.495HK$89.90
760 - 1480HK$4.385HK$87.70
1500 +HK$4.315HK$86.30

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包裝方式:
RS庫存編號:
180-7915
製造零件編號:
SI1411DH-T1-GE3
製造商:
Vishay
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品牌

Vishay

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

520mA

Maximum Drain Source Voltage Vds

150V

Package Type

SOT-363

Series

TrenchFET

Mount Type

Surface

Pin Count

6

Maximum Drain Source Resistance Rds

2.6Ω

Channel Mode

Enhancement

Maximum Power Dissipation Pd

1W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

4.2nC

Forward Voltage Vf

-1.1V

Maximum Gate Source Voltage Vgs

20V

Maximum Operating Temperature

150°C

Height

1.1mm

Length

2.2mm

Standards/Approvals

No

Width

2.4mm

Automotive Standard

No

COO (Country of Origin):
CN
The Vishay Siliconix SI1411DH series TrenchFET P channel power MOSFET has drain to source voltage of 150 V. It is used in active clamp circuits in DC/DC power supplies.

Small, thermally enhanced SC-70 package

Ultra low on-resistance

Pb-free

Halogen free

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