Vishay TrenchFET Type P-Channel MOSFET, 50 A, 60 V Enhancement, 3-Pin TO-252 SQD50P06-15L_GE3
- RS庫存編號:
- 180-7967
- 製造零件編號:
- SQD50P06-15L_GE3
- 製造商:
- Vishay
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
查看批量定價選項小計（1 包，共 5 件）*
HK$162.80
訂單超過 HK$250.00 免費送貨
最後的 RS 庫存
- 115 件準備從其他地點送貨
- 最終 1,360 件從 2026年9月15日 起發貨
單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 495 | HK$32.56 | HK$162.80 |
| 500 - 995 | HK$31.74 | HK$158.70 |
| 1000 + | HK$31.24 | HK$156.20 |
* 參考價格
- RS庫存編號:
- 180-7967
- 製造零件編號:
- SQD50P06-15L_GE3
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 50A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TO-252 | |
| Series | TrenchFET | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 20mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 136W | |
| Forward Voltage Vf | -1.5V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 98nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Height | 2.38mm | |
| Standards/Approvals | No | |
| Length | 10.41mm | |
| Width | 6.73mm | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 50A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TO-252 | ||
Series TrenchFET | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 20mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 136W | ||
Forward Voltage Vf -1.5V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 98nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Height 2.38mm | ||
Standards/Approvals No | ||
Length 10.41mm | ||
Width 6.73mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- TW
Vishay MOSFET
The Vishay surface mount P-channel MOSFET is a new age product with a drain-source voltage of 60V and a maximum gate-source voltage of 20V. It has drain-source resistance of 15.5mohm at a gate-source voltage of 10V. It has continuous drain current of 50A and maximum power dissipation of 136W. The minimum and a maximum driving voltage for this transistor are 4.5V and 10V respectively. It is used in automotive applications. The MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.
Features and Benefits
• Halogen free
• Lead (Pb) free
• Operating temperature ranges between -55°C and 175°C
• Package with low thermal resistance
• TrenchFET power MOSFET
Applications
• Adaptor switch
• Load switches
Certifications
• AEC-Q101
• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
• Rg tested
• UIS tested
相关链接
- Vishay TrenchFET Type P-Channel MOSFET 60 V Enhancement, 3-Pin TO-252 SQD50P06-15L_GE3
- Vishay SQD P-Channel Single MOSFETs -60 V Enhancement Mode, 3-Pin TO-252 SQD50P06-15L_NE3
- Vishay Siliconix TrenchFET Type P-Channel MOSFET 40 V Enhancement, 4-Pin TO-252 SQD40061EL_GE3
- Vishay Siliconix TrenchFET Type P-Channel MOSFET 30 V Enhancement, 4-Pin TO-252 SQD40031EL_GE3
- Vishay TrenchFET Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-252 SQD50034E_GE3
- Vishay TrenchFET Type P-Channel TrenchFET Power MOSFET 60 V Enhancement, 3-Pin SOT-23 SQ2309ES-T1_GE3
- Vishay TrenchFET Type N-Channel MOSFET 40 V Enhancement, 3-Pin TO-252 SQD40052EL_GE3
- Vishay TrenchFET Type N-Channel MOSFET 40 V Enhancement, 3-Pin TO-252 SQD40020EL_GE3