Vishay Single 1 N-Channel Power MOSFET, 3.3 A, 500 V IRFR420APBF

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小計(1 管,共 75 件)*

HK$648.53

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單位
每單位
每管*
75 - 75HK$8.647HK$648.53
150 - 225HK$8.459HK$634.43
300 +HK$8.269HK$620.18

* 參考價格

RS庫存編號:
180-8343
製造零件編號:
IRFR420APBF
製造商:
Vishay
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品牌

Vishay

Product Type

Power MOSFET

Channel Type

N

Maximum Continuous Drain Current Id

3.3A

Maximum Drain Source Voltage Vds

500V

Maximum Drain Source Resistance Rds

3Ω

Forward Voltage Vf

1.6V

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

30V

Typical Gate Charge Qg @ Vgs

17nC

Maximum Power Dissipation Pd

83W

Maximum Operating Temperature

150°C

Transistor Configuration

Single

Standards/Approvals

No

Number of Elements per Chip

1

Automotive Standard

No

COO (Country of Origin):
CN

Vishay MOSFET


The Vishay MOSFET is an N-channel is a new age product with a drain-source voltage of 500V and maximum gate-source voltage of 30V. It has a drain-source resistance of 3ohm at a gate-source voltage of 10V. The MOSFET has a maximum power dissipation of 83W. This product has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits


• Effective coss specified

• Fully characterized capacitance and avalanche voltage and current

• Halogen and lead (Pb) free component

• Improved gate, avalanche and dynamic dV/dt

• Low gate charge Qg results in simple drive requirement

• Operating temperature ranges between -55°C and 150°

Applications


• High speed power switching

• Switch mode power supply (SMPS)

• Uninterruptible power supplies

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