Vishay SiSS05DN Type P-Channel MOSFET, 108 A, 30 V Enhancement, 8-Pin PowerPAK 1212
- RS庫存編號:
- 188-4900
- 製造零件編號:
- SiSS05DN-T1-GE3
- 製造商:
- Vishay
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 卷，共 3000 件）*
HK$15,867.00
库存信息目前无法访问 - 请稍候查看
單位 | 每單位 | 每卷* |
|---|---|---|
| 3000 - 3000 | HK$5.289 | HK$15,867.00 |
| 6000 - 9000 | HK$5.13 | HK$15,390.00 |
| 12000 + | HK$4.976 | HK$14,928.00 |
* 參考價格
- RS庫存編號:
- 188-4900
- 製造零件編號:
- SiSS05DN-T1-GE3
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 108A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | PowerPAK 1212 | |
| Series | SiSS05DN | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 5.8mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | -1.1V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 65.7W | |
| Typical Gate Charge Qg @ Vgs | 76nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 3.3mm | |
| Height | 0.78mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 108A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type PowerPAK 1212 | ||
Series SiSS05DN | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 5.8mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf -1.1V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 65.7W | ||
Typical Gate Charge Qg @ Vgs 76nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 3.3mm | ||
Height 0.78mm | ||
Automotive Standard No | ||
P-Channel 30 V (D-S) MOSFET.
TrenchFET® Gen IV p-channel power MOSFET
Provides exceptionally low RDS(on) in a compact package that is thermally enhanced
Enables higher power density
相关链接
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