STMicroelectronics DM6 Type N-Channel MOSFET, 33 A, 650 V Enhancement, 3-Pin TO-247 STW50N65DM6
- RS庫存編號:
- 204-3948
- 製造零件編號:
- STW50N65DM6
- 製造商:
- STMicroelectronics
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小計（1 包，共 2 件）*
HK$143.40
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單位 | 每單位 | 每包* |
|---|---|---|
| 2 - 6 | HK$71.70 | HK$143.40 |
| 8 - 14 | HK$69.90 | HK$139.80 |
| 16 + | HK$68.85 | HK$137.70 |
* 參考價格
- RS庫存編號:
- 204-3948
- 製造零件編號:
- STW50N65DM6
- 製造商:
- STMicroelectronics
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 33A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | DM6 | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 91mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 52.5nC | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Maximum Power Dissipation Pd | 250W | |
| Maximum Operating Temperature | 175°C | |
| Width | 5.15 mm | |
| Standards/Approvals | No | |
| Length | 15.75mm | |
| Height | 20.15mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 33A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series DM6 | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 91mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 52.5nC | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Maximum Power Dissipation Pd 250W | ||
Maximum Operating Temperature 175°C | ||
Width 5.15 mm | ||
Standards/Approvals No | ||
Length 15.75mm | ||
Height 20.15mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The STMicroelectronics high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviours available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.
Fast-recovery body diode
Lower RDS(on) per area vs previous generation
Low gate charge, input capacitance and resistance
100% avalanche tested
Extremely high dv/dt ruggedness
Zener-protected
相关链接
- STMicroelectronics DM6 Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247
- STMicroelectronics MDmesh DM6 Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247
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