Vishay Dual SQJ264EP 2 Type N-Channel MOSFET, 54 A, 60 V Enhancement, 6-Pin SO-8 SQJ264EP-T1_GE3
- RS庫存編號:
- 204-7238
- 製造零件編號:
- SQJ264EP-T1_GE3
- 製造商:
- Vishay
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查看批量定價選項小計（1 包，共 20 件）*
HK$227.40
訂單超過 HK$250.00 免費送貨
暫時缺貨
- 從 2027年3月29日 發貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 20 - 740 | HK$11.37 | HK$227.40 |
| 760 - 1480 | HK$11.085 | HK$221.70 |
| 1500 + | HK$10.915 | HK$218.30 |
* 參考價格
- RS庫存編號:
- 204-7238
- 製造零件編號:
- SQJ264EP-T1_GE3
- 製造商:
- Vishay
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 54A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | SQJ264EP | |
| Package Type | SO-8 | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 20mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.82V | |
| Typical Gate Charge Qg @ Vgs | 9.2nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 48W | |
| Maximum Operating Temperature | 175°C | |
| Transistor Configuration | Dual | |
| Height | 1.07mm | |
| Standards/Approvals | No | |
| Length | 4.9mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 54A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series SQJ264EP | ||
Package Type SO-8 | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 20mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.82V | ||
Typical Gate Charge Qg @ Vgs 9.2nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 48W | ||
Maximum Operating Temperature 175°C | ||
Transistor Configuration Dual | ||
Height 1.07mm | ||
Standards/Approvals No | ||
Length 4.9mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
The Vishay Automotive Dual N-Channel 60 V (D-S) 175 °C MOSFETs is optimized for synchronous buck applications. It is AEC-Q101 qualified.
100 % Rg and UIS tested
TrenchFET Gen IV power MOSFET
相关链接
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