Vishay Dual TrenchFET 2 Type N-Channel MOSFET, 7 A, 60 V Enhancement, 8-Pin SO-8 SQ4946CEY-T1_GE3
- RS庫存編號:
- 228-2946
- 製造零件編號:
- SQ4946CEY-T1_GE3
- 製造商:
- Vishay
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 10 件）*
HK$73.40
訂單超過 HK$250.00 免費送貨
有庫存
- 80 件準備從其他地點送貨
- 加上 2,500 件從 2026年8月07日 起發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 10 - 40 | HK$7.34 | HK$73.40 |
| 50 - 90 | HK$7.20 | HK$72.00 |
| 100 - 240 | HK$7.07 | HK$70.70 |
| 250 - 990 | HK$6.94 | HK$69.40 |
| 1000 + | HK$6.82 | HK$68.20 |
* 參考價格
- RS庫存編號:
- 228-2946
- 製造零件編號:
- SQ4946CEY-T1_GE3
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 7A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SO-8 | |
| Series | TrenchFET | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 40mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 11.7nC | |
| Forward Voltage Vf | 1.1V | |
| Maximum Power Dissipation Pd | 4W | |
| Minimum Operating Temperature | -55°C | |
| Transistor Configuration | Dual | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | AEC-Q101 | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 7A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SO-8 | ||
Series TrenchFET | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 40mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 11.7nC | ||
Forward Voltage Vf 1.1V | ||
Maximum Power Dissipation Pd 4W | ||
Minimum Operating Temperature -55°C | ||
Transistor Configuration Dual | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals AEC-Q101 | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
The Vishay TrenchFET automotive dual N-channel is power MOSFET.
100 % Rg and UIS tested
相关链接
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