onsemi SUPERFET III N-Channel MOSFET & Diode, 24 A, 650 V Enhancement, 3-Pin TO-263 FCB125N65S3
- RS庫存編號:
- 205-2470
- 製造零件編號:
- FCB125N65S3
- 製造商:
- onsemi
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HK$252.20
訂單超過 HK$250.00 免費送貨
有限的庫存
- 715 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 195 | HK$50.44 | HK$252.20 |
| 200 - 395 | HK$49.16 | HK$245.80 |
| 400 + | HK$48.38 | HK$241.90 |
* 參考價格
- RS庫存編號:
- 205-2470
- 製造零件編號:
- FCB125N65S3
- 製造商:
- onsemi
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Product Type | MOSFET & Diode | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 24A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | SUPERFET III | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 125mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 46nC | |
| Maximum Power Dissipation Pd | 181W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Width | 9.6mm | |
| Length | 14.6mm | |
| Standards/Approvals | RoHS | |
| Height | 4.6mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Product Type MOSFET & Diode | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 24A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series SUPERFET III | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 125mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 46nC | ||
Maximum Power Dissipation Pd 181W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 30V | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Width 9.6mm | ||
Length 14.6mm | ||
Standards/Approvals RoHS | ||
Height 4.6mm | ||
Automotive Standard No | ||
The ON Semiconductor SUPERFET III series N-Channel MOSFET is high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provides superior switching performance, and withstand extreme dv/dt rate.
Continuous Drain Current rating is 24A
Drain to source on resistance rating is 125mohm
Ultra low gate charge
Low stored energy in output capacitance
100% avalanche tested
Package type is D2-PAK
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