onsemi SUPERFET III N-Channel MOSFET, 62 A, 650 V Enhancement, 4-Pin TO-247 NTH4LN040N65S3H
- RS庫存編號:
- 230-9084
- 製造零件編號:
- NTH4LN040N65S3H
- 製造商:
- onsemi
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HK$44,854.65
訂單超過 HK$250.00 免費送貨
暫時缺貨
- 從 2027年9月06日 發貨
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單位 | 每單位 | 每管* | 節省 |
|---|---|---|---|
| 450 - 450 | HK$99.677 | HK$44,854.65 | - |
| 900 - 4050 | HK$97.684 | HK$43,957.80 | 1% |
| 4500 + | HK$95.729 | HK$43,078.05 | 3% |
* 參考價格
- RS庫存編號:
- 230-9084
- 製造零件編號:
- NTH4LN040N65S3H
- 製造商:
- onsemi
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 62A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | SUPERFET III | |
| Package Type | TO-247 | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 40mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 132nC | |
| Forward Voltage Vf | 1.3V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 379W | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.2mm | |
| Width | 2.4mm | |
| Standards/Approvals | No | |
| Height | 13.28mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 62A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series SUPERFET III | ||
Package Type TO-247 | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 40mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 132nC | ||
Forward Voltage Vf 1.3V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 379W | ||
Maximum Operating Temperature 175°C | ||
Length 10.2mm | ||
Width 2.4mm | ||
Standards/Approvals No | ||
Height 13.28mm | ||
Automotive Standard No | ||
The ON Semiconductor series SUPERFET III MOSFET is new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET FAST series helps minimize various power systems and improve system efficiency.
100% Avalanche Tested
RoHS Compliant
Typ. RDS(on) = 32 mΩ
Internal Gate Resistance: 0.7 Ω
Ultra Low Gate Charge (Typ. Qg = 132 nC)
700 V @ TJ = 150 oC
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