onsemi NTB N-Channel MOSFET & Diode, 19.5 A, 1.2 kV Enhancement, 7-Pin TO-263 NTBG160N120SC1
- RS庫存編號:
- 205-2494
- 製造零件編號:
- NTBG160N120SC1
- 製造商:
- onsemi
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HK$296.70
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單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 195 | HK$59.34 | HK$296.70 |
| 200 - 395 | HK$57.86 | HK$289.30 |
| 400 + | HK$56.98 | HK$284.90 |
* 參考價格
- RS庫存編號:
- 205-2494
- 製造零件編號:
- NTBG160N120SC1
- 製造商:
- onsemi
規格
產品概覽和技術數據資料表
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Channel Type | N | |
| Product Type | MOSFET & Diode | |
| Maximum Continuous Drain Current Id | 19.5A | |
| Maximum Drain Source Voltage Vds | 1.2kV | |
| Package Type | TO-263 | |
| Series | NTB | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 225mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 136W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 33.8nC | |
| Maximum Gate Source Voltage Vgs | 25V | |
| Forward Voltage Vf | 3.9V | |
| Maximum Operating Temperature | 150°C | |
| Width | 9.7mm | |
| Standards/Approvals | Pb-Free, RoHS | |
| Length | 15.1mm | |
| Height | 4.3mm | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Channel Type N | ||
Product Type MOSFET & Diode | ||
Maximum Continuous Drain Current Id 19.5A | ||
Maximum Drain Source Voltage Vds 1.2kV | ||
Package Type TO-263 | ||
Series NTB | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 225mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 136W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 33.8nC | ||
Maximum Gate Source Voltage Vgs 25V | ||
Forward Voltage Vf 3.9V | ||
Maximum Operating Temperature 150°C | ||
Width 9.7mm | ||
Standards/Approvals Pb-Free, RoHS | ||
Length 15.1mm | ||
Height 4.3mm | ||
Automotive Standard AEC-Q101 | ||
Silicon Carbide (SiC) MOSFET - EliteSiC, 160 mohm, 1200 V, M1, D2PAK-7L Silicon Carbide (SiC) MOSFET - EliteSiC, 160 mohm, 1200 V, M1, D2PAK-7L
The ON Semiconductor SiC N-channel 1200V MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.
Continuous Drain Current rating is 19.5A
Drain to source on resistance rating is 224mohm
Ultra Low Gate Charge
High Speed Switching and Low Capacitance
100% Avalanche Tested
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