Infineon CoolMOS CE N-Channel MOSFET, 3.9 A, 800 V Enhancement, 3-Pin TO-252 IPD80R1K4CEATMA1

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小計(1 卷,共 2500 件)*

HK$11,950.00

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RS庫存編號:
214-4395
製造零件編號:
IPD80R1K4CEATMA1
製造商:
Infineon
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品牌

Infineon

Product Type

MOSFET

Channel Type

N

Maximum Continuous Drain Current Id

3.9A

Maximum Drain Source Voltage Vds

800V

Series

CoolMOS CE

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

1.4Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

63W

Forward Voltage Vf

1.2V

Maximum Gate Source Voltage Vgs

20V

Typical Gate Charge Qg @ Vgs

23nC

Maximum Operating Temperature

150°C

Standards/Approvals

No

Width

6.42mm

Height

2.35mm

Length

6.65mm

Automotive Standard

No

This Infineon 800V Cool MOS CE MOSFET has high voltage capability that combines safety with performance and ruggedness to allow stable designs at highest efficiency level.

It is RoHS compliant

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