Infineon CoolMOS CE N-Channel MOSFET, 9 A, 500 V Enhancement, 3-Pin TO-252 IPD50R650CEAUMA1

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小計(1 包,共 25 件)*

HK$248.00

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25 - 600HK$9.92HK$248.00
625 - 1225HK$9.672HK$241.80
1250 +HK$9.524HK$238.10

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包裝方式:
RS庫存編號:
214-9041
製造零件編號:
IPD50R650CEAUMA1
製造商:
Infineon
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品牌

Infineon

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

9A

Maximum Drain Source Voltage Vds

500V

Series

CoolMOS CE

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

650mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20V

Forward Voltage Vf

840mV

Maximum Power Dissipation Pd

47W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

15nC

Maximum Operating Temperature

150°C

Height

2.41mm

Standards/Approvals

No

Width

6.22mm

Length

6.73mm

Automotive Standard

No

The Infineon CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. CoolMOS CE is a price-performance optimized platform enabling to target cost sensitive applications in Consumer and Lighting markets by still meeting highest efficiency standards. The new series provides all benefits of a fast switching Super junction MOSFET while not sacrificing ease of use and offering the best cost down performance ratio available on the market.

Easy to use/drive

Very high commutation ruggedness

Qualified for standard grade applications

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