Infineon CoolMOS N-Channel MOSFET, 9 A, 650 V Enhancement, 3-Pin TO-252

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小計(1 卷,共 2500 件)*

HK$18,742.50

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RS庫存編號:
222-4670
製造零件編號:
IPD60R280CFD7ATMA1
製造商:
Infineon
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品牌

Infineon

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

9A

Maximum Drain Source Voltage Vds

650V

Series

CoolMOS

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

280mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20V

Forward Voltage Vf

1V

Typical Gate Charge Qg @ Vgs

18nC

Maximum Power Dissipation Pd

51W

Width

6.22mm

Standards/Approvals

No

Height

2.41mm

Length

6.73mm

Automotive Standard

No

The Infineon design of MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.

Green Product (RoHS compliant)

MSL1 up to 260°C peak reflow AEC Q101 qualified

OptiMOS™ - power MOSFET for automotive applications

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