Infineon OptiMOS Type N-Channel MOSFET, 120 A, 80 V Enhancement, 3-Pin TO-220 IPP023N08N5AKSA1
- RS庫存編號:
- 214-4404
- 製造零件編號:
- IPP023N08N5AKSA1
- 製造商:
- Infineon
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可享批量折扣
小計（1 包，共 5 件）*
HK$164.20
訂單超過 HK$250.00 免費送貨
有庫存
- 加上 445 件從 2026年3月06日 起發貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 10 | HK$32.84 | HK$164.20 |
| 15 - 20 | HK$32.02 | HK$160.10 |
| 25 + | HK$31.54 | HK$157.70 |
* 參考價格
- RS庫存編號:
- 214-4404
- 製造零件編號:
- IPP023N08N5AKSA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 120A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | TO-220 | |
| Series | OptiMOS | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 2.3mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 133nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 300W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Length | 10.2mm | |
| Width | 15.93 mm | |
| Height | 4.4mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 120A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type TO-220 | ||
Series OptiMOS | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 2.3mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 133nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 300W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Length 10.2mm | ||
Width 15.93 mm | ||
Height 4.4mm | ||
Automotive Standard No | ||
This Infineon OptiMOS 5 MOSFET is ideal for high frequency switching and synchronous rectification. It requires less paralleling.
It has reduced switching and conduction losses
It has low voltage overshoot
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