Infineon OptiMOS-T2 N-Channel MOSFET, 120 A, 80 V Enhancement, 3-Pin TO-220 IPP120N08S403AKSA1

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HK$1,487.70

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50 - 50HK$29.754HK$1,487.70
100 - 150HK$29.11HK$1,455.50
200 +HK$28.46HK$1,423.00

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RS庫存編號:
214-9087
製造零件編號:
IPP120N08S403AKSA1
製造商:
Infineon
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品牌

Infineon

Product Type

MOSFET

Channel Type

N

Maximum Continuous Drain Current Id

120A

Maximum Drain Source Voltage Vds

80V

Series

OptiMOS-T2

Package Type

TO-220

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

2.8mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20V

Forward Voltage Vf

1.3V

Maximum Power Dissipation Pd

278W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

128nC

Maximum Operating Temperature

175°C

Standards/Approvals

No

Width

4.57mm

Height

9.45mm

Length

10.36mm

Automotive Standard

AEC-Q101

The Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and Strong IRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

The product is AEC Q101 qualified

It has 175°C operating temperature

100% Avalanche tested

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