Infineon OptiMOS-T2 Type N-Channel MOSFET, 120 A, 60 V Enhancement, 3-Pin TO-263 IPB120N06S4H1ATMA2
- RS庫存編號:
- 218-3033
- 製造零件編號:
- IPB120N06S4H1ATMA2
- 製造商:
- Infineon
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可享批量折扣
小計（1 包，共 5 件）*
HK$185.80
訂單超過 HK$250.00 免費送貨
有庫存
- 950 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 245 | HK$37.16 | HK$185.80 |
| 250 - 495 | HK$36.22 | HK$181.10 |
| 500 + | HK$35.68 | HK$178.40 |
* 參考價格
- RS庫存編號:
- 218-3033
- 製造零件編號:
- IPB120N06S4H1ATMA2
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 120A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TO-263 | |
| Series | OptiMOS-T2 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 2mΩ | |
| Channel Mode | Enhancement | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 120A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TO-263 | ||
Series OptiMOS-T2 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 2mΩ | ||
Channel Mode Enhancement | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
The Infineon OptiMOS™-T2 series N-channel power MOSFET. It has low switching and conduction power losses for high thermal efficiency.
N-channel - Enhancement mode
175°C operating temperature
100% Avalanche tested
相关链接
- Infineon OptiMOS-T2 Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-263
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- Infineon OptiMOS -T2 Type N-Channel MOSFET 80 V Enhancement, 3-Pin TO-263
- Infineon OptiMOS-T2 Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-263 IPB120N06S402ATMA2
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- Infineon OptiMOS-T2 Type N-Channel MOSFET 40 V Enhancement, 7-Pin TO-263
- Infineon OptiMOS-T2 Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-263