Infineon OptiMOS -T2 Type N-Channel MOSFET, 120 A, 80 V Enhancement, 3-Pin TO-263 IPB120N08S403ATMA1
- RS庫存編號:
- 214-4366
- 製造零件編號:
- IPB120N08S403ATMA1
- 製造商:
- Infineon
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可享批量折扣
查看批量定價選項小計（1 包，共 5 件）*
HK$261.30
訂單超過 HK$250.00 免費送貨
最後的 RS 庫存
- 最終 220 個，準備發貨
單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 245 | HK$52.26 | HK$261.30 |
| 250 - 495 | HK$50.94 | HK$254.70 |
| 500 + | HK$50.16 | HK$250.80 |
* 參考價格
- RS庫存編號:
- 214-4366
- 製造零件編號:
- IPB120N08S403ATMA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 120A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | TO-263 | |
| Series | OptiMOS -T2 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 2.5mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 128nC | |
| Forward Voltage Vf | 1.3V | |
| Maximum Power Dissipation Pd | 278W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Height | 4.5mm | |
| Standards/Approvals | No | |
| Length | 10.02mm | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 120A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type TO-263 | ||
Series OptiMOS -T2 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 2.5mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 128nC | ||
Forward Voltage Vf 1.3V | ||
Maximum Power Dissipation Pd 278W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Height 4.5mm | ||
Standards/Approvals No | ||
Length 10.02mm | ||
Automotive Standard AEC-Q101 | ||
This Infineon OptiMOS T2 MOSFET is 100% Avalanche tested and is RoHS compliant.
It is AEC Q101 qualified
相关链接
- Infineon OptiMOS -T2 Type N-Channel MOSFET 80 V Enhancement, 3-Pin TO-263
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