Infineon OptiMOS 3 Type N-Channel MOSFET, 96 A, 200 V Enhancement, 8-Pin HSOF IPT111N20NFDATMA1

此圖片僅供參考，請參閲產品詳細資訊及規格

查看所有MOSFETs
可享批量折扣

小計（1 包，共 2 件）*

HK$117.20

Add to Basket
選擇或輸入數量
有庫存
  • 1,060 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位
每單位
每包*
2 - 498HK$58.60HK$117.20
500 - 998HK$57.15HK$114.30
1000 +HK$56.25HK$112.50

* 參考價格

包裝方式：
RS庫存編號:
214-4424
製造零件編號:
IPT111N20NFDATMA1
製造商:
Infineon
透過選取一個或多個屬性來查找類似產品。
選取全部

品牌

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

96A

Maximum Drain Source Voltage Vds

200V

Package Type

HSOF

Series

OptiMOS 3

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

11.1mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

65nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

375W

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1.2V

Maximum Operating Temperature

175°C

Standards/Approvals

No

Height

2.4mm

Length

10.1mm

Width

10.58 mm

Automotive Standard

No

This Infineon OptiMOS 3 MOSFET is perfect solution for high power applications where highest efficiency, outstanding EMI behaviour as well as best thermal behaviour and space reduction are required.

It is RoHS compliant

相关链接