Infineon OptiMOS 3 N-Channel MOSFET, 300 A, 100 V Enhancement, 8-Pin HSOF IPT020N10N3ATMA1

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小計(1 包,共 2 件)*

HK$125.30

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2 - 498HK$62.65HK$125.30
500 - 998HK$61.10HK$122.20
1000 +HK$60.15HK$120.30

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包裝方式:
RS庫存編號:
906-4356
製造零件編號:
IPT020N10N3ATMA1
製造商:
Infineon
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品牌

Infineon

Product Type

MOSFET

Channel Type

N

Maximum Continuous Drain Current Id

300A

Maximum Drain Source Voltage Vds

100V

Package Type

HSOF

Series

OptiMOS 3

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

3.7mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

-20V, +20V

Forward Voltage Vf

1V

Maximum Power Dissipation Pd

375W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

156nC

Maximum Operating Temperature

175°C

Width

10.1mm

Standards/Approvals

No

Length

10.58mm

Height

2.4mm

Automotive Standard

No

豁免

Infineon OptiMOS™3 Power MOSFETs, 100V and over


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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