Infineon HEXFET N-Channel MOSFET, 110 A, 55 V, 3-Pin TO-262 IRF3205ZLPBF

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小計(1 包,共 10 件)*

HK$118.30

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10 - 10HK$11.83HK$118.30
20 - 20HK$11.54HK$115.40
30 +HK$11.36HK$113.60

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包裝方式:
RS庫存編號:
214-4448
製造零件編號:
IRF3205ZLPBF
製造商:
Infineon
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品牌

Infineon

Product Type

MOSFET

Channel Type

N

Maximum Continuous Drain Current Id

110A

Maximum Drain Source Voltage Vds

55V

Series

HEXFET

Package Type

TO-262

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

6.5mΩ

Forward Voltage Vf

1.3V

Maximum Gate Source Voltage Vgs

20V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

110nC

Maximum Power Dissipation Pd

170W

Maximum Operating Temperature

175°C

Standards/Approvals

No

Automotive Standard

No

This HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche

It is lead-free

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