Infineon HEXFET N-Channel MOSFET, 72 A, 200 V TO-262 IRFS4127TRLPBF
- RS庫存編號:
- 257-5836
- 製造零件編號:
- IRFS4127TRLPBF
- 製造商:
- Infineon
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HK$79.40
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單位 | 每單位 | 每包* | 節省 |
|---|---|---|---|
| 2 - 8 | HK$39.70 | HK$79.40 | - |
| 10 - 48 | HK$34.15 | HK$68.30 | 13% |
| 50 - 98 | HK$33.40 | HK$66.80 | 15% |
| 100 - 248 | HK$29.90 | HK$59.80 | 24% |
| 250 + | HK$29.30 | HK$58.60 | 26% |
* 參考價格
- RS庫存編號:
- 257-5836
- 製造零件編號:
- IRFS4127TRLPBF
- 製造商:
- Infineon
規格
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 72A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Package Type | TO-262 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 18.6mΩ | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 375W | |
| Typical Gate Charge Qg @ Vgs | 100nC | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 72A | ||
Maximum Drain Source Voltage Vds 200V | ||
Package Type TO-262 | ||
Series HEXFET | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 18.6mΩ | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 375W | ||
Typical Gate Charge Qg @ Vgs 100nC | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon MOSFET is improved gate, avalanche and dynamic dV/dt ruggedness and fully characterized capacitance and avalanche SOA.
Enhanced body diode dV/dt and dI/dt Capability
Lead-Free
High efficiency synchronous rectification in SMPS
Uninterruptible power supply
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