Infineon CoolMOS P7 N-Channel MOSFET, 6 A, 800 V Enhancement, 3-Pin TO-251 IPS80R900P7AKMA1
- RS庫存編號:
- 214-9109
- 製造零件編號:
- IPS80R900P7AKMA1
- 製造商:
- Infineon
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可享批量折扣
查看批量定價選項小計（1 管，共 75 件）*
HK$555.90
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單位 | 每單位 | 每管* |
|---|---|---|
| 75 - 75 | HK$7.412 | HK$555.90 |
| 150 - 225 | HK$7.189 | HK$539.18 |
| 300 + | HK$6.973 | HK$522.98 |
* 參考價格
- RS庫存編號:
- 214-9109
- 製造零件編號:
- IPS80R900P7AKMA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
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產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 6A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Package Type | TO-251 | |
| Series | CoolMOS P7 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 900mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 15nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 45W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 900mV | |
| Maximum Operating Temperature | 150°C | |
| Length | 6.7mm | |
| Height | 6.22mm | |
| Width | 2.35mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 6A | ||
Maximum Drain Source Voltage Vds 800V | ||
Package Type TO-251 | ||
Series CoolMOS P7 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 900mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 15nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 45W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 900mV | ||
Maximum Operating Temperature 150°C | ||
Length 6.7mm | ||
Height 6.22mm | ||
Width 2.35mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon latest 800V CoolMOS P7 series sets a new benchmark in 800V super junction technologies and combines best-in-class performance with state of the art ease-of-use, resulting from Infineon’s over 18 years pioneering super junction technology innovation. These are Easy to drive and to parallel, enabling higher power density designs, BOM savings and lower assembly costs.
Fully optimized portfolio
Integrated Zener Diode ESD protection
相关链接
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