Infineon CoolMOS P7 Type N-Channel MOSFET, 6 A, 800 V Enhancement, 3-Pin TO-251 IPS80R900P7AKMA1

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HK$118.695

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包裝方式:
RS庫存編號:
214-9110
製造零件編號:
IPS80R900P7AKMA1
製造商:
Infineon
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品牌

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

6A

Maximum Drain Source Voltage Vds

800V

Package Type

TO-251

Series

CoolMOS P7

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

900mΩ

Channel Mode

Enhancement

Forward Voltage Vf

0.9V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

15nC

Maximum Power Dissipation Pd

45W

Maximum Operating Temperature

150°C

Standards/Approvals

No

Height

6.22mm

Length

6.7mm

Automotive Standard

No

The Infineon latest 800V CoolMOS P7 series sets a new benchmark in 800V super junction technologies and combines best-in-class performance with state of the art ease-of-use, resulting from Infineon’s over 18 years pioneering super junction technology innovation. These are Easy to drive and to parallel, enabling higher power density designs, BOM savings and lower assembly costs.

Fully optimized portfolio

Integrated Zener Diode ESD protection

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