Infineon CoolMOS CFD7 N-Channel MOSFET, 18 A, 600 V Enhancement, 3-Pin TO-247 IPW60R125CFD7XKSA1

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小計(1 管,共 30 件)*

HK$897.51

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單位
每單位
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30 - 30HK$29.917HK$897.51
60 - 90HK$29.267HK$878.01
120 +HK$28.617HK$858.51

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RS庫存編號:
214-9114
製造零件編號:
IPW60R125CFD7XKSA1
製造商:
Infineon
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品牌

Infineon

Product Type

MOSFET

Channel Type

N

Maximum Continuous Drain Current Id

18A

Maximum Drain Source Voltage Vds

600V

Series

CoolMOS CFD7

Package Type

TO-247

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

125mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1V

Maximum Gate Source Voltage Vgs

20V

Maximum Power Dissipation Pd

92W

Typical Gate Charge Qg @ Vgs

36nC

Standards/Approvals

No

Length

16.13mm

Width

5.21mm

Height

21.1mm

Automotive Standard

No

The Infineon CoolMOS Series is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS CFD7 is the successor to the CoolMOS CFD2 series and is an optimized platform tailored to target soft switching applications such as phase-shift full-bridge (ZVS) and LLC. The CoolMOS CFD7 technology meets highest efficiency and reliability standards and furthermore supports high power density solutions. Altogether, CoolMOS CFD7 makes resonant switching topologies more efficient, more reliable, lighter and cooler.

Ultra-fast body diode

Low gate charge

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