Infineon IPD N-Channel MOSFET, 9 A, 600 V Enhancement, 3-Pin TO-252 IPD60R360P7SAUMA1
- RS庫存編號:
- 217-2522
- 製造零件編號:
- IPD60R360P7SAUMA1
- 製造商:
- Infineon
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可享批量折扣
查看批量定價選項小計(1 卷,共 2500 件)*
HK$8,055.00
訂單超過 HK$250.00 免費送貨
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- 2,500 件準備從其他地點送貨
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單位 | 每單位 | 每卷* |
|---|---|---|
| 2500 - 10000 | HK$3.222 | HK$8,055.00 |
| 12500 + | HK$3.157 | HK$7,892.50 |
* 參考價格
- RS庫存編號:
- 217-2522
- 製造零件編號:
- IPD60R360P7SAUMA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 9A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-252 | |
| Series | IPD | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 360mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 41W | |
| Typical Gate Charge Qg @ Vgs | 9.4nC | |
| Minimum Operating Temperature | -40°C | |
| Forward Voltage Vf | 900mV | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 150°C | |
| Width | 6.22mm | |
| Standards/Approvals | No | |
| Height | 2.41mm | |
| Length | 6.73mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 9A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-252 | ||
Series IPD | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 360mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 41W | ||
Typical Gate Charge Qg @ Vgs 9.4nC | ||
Minimum Operating Temperature -40°C | ||
Forward Voltage Vf 900mV | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 150°C | ||
Width 6.22mm | ||
Standards/Approvals No | ||
Height 2.41mm | ||
Length 6.73mm | ||
Automotive Standard No | ||
Infineon IPD Series MOSFET, 600V Drain Source Voltage, 41W Maximum Power Dissipation - IPD60R360P7SAUMA1
This MOSFET is a high-voltage N‑channel enhancement device designed for switching and power-control applications where elevated drain‑source voltage and moderate current capability are required. It operates across a wide temperature range and is supplied in a surface-mount package suitable for Compact power assemblies.
Features and Benefits:
• 600V drain‑source rating enabling high-voltage switching
• 9A continuous drain current supporting moderate load currents
• 360mΩ Rds(on) minimises conduction losses during operation
• 9.4nC gate charge for reduced switching drive requirements
• 41W power dissipation allowing substantial thermal loading
• 20V gate‑source limit permitting wide gate‑drive ranges
• 9A continuous drain current supporting moderate load currents
• 360mΩ Rds(on) minimises conduction losses during operation
• 9.4nC gate charge for reduced switching drive requirements
• 41W power dissipation allowing substantial thermal loading
• 20V gate‑source limit permitting wide gate‑drive ranges
Applications
• Suitable for high-voltage power converters and inverters
• Used for switch elements in motor-drive stages
• Ideal for industrial power-supply switching duties
• Can be used for half-bridge and clamp circuits
• Used with discrete power assemblies in Compact SMD designs
• Used for switch elements in motor-drive stages
• Ideal for industrial power-supply switching duties
• Can be used for half-bridge and clamp circuits
• Used with discrete power assemblies in Compact SMD designs
What thermal range can this device withstand?
It is specified to operate from −40°C up to 150°C to accommodate harsh thermal environments.
What package type and mounting style are provided?
The device is supplied in a TO‑252 package configured for surface mounting to suit PCB power layouts.
How does the forward voltage affect conduction behaviour?
The forward voltage is 0.9V, which influences low-side conduction drop during forward current flow.
What gate drive limitations must be observed?
Gate‑source voltage must not exceed 20V to prevent gate oxide stress.
How many external connections does it present?
The component has three pins for gate, drain and source connections.
相关链接
- Infineon IPD N-Channel MOSFET 600 V Enhancement, 3-Pin TO-252 IPD60R360P7SAUMA1
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