Infineon IPD N-Channel MOSFET, 9 A, 600 V Enhancement, 3-Pin TO-252

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RS庫存編號:
217-2522
製造零件編號:
IPD60R360P7SAUMA1
製造商:
Infineon
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品牌

Infineon

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

9A

Maximum Drain Source Voltage Vds

600V

Package Type

TO-252

Series

IPD

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

360mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-40°C

Maximum Power Dissipation Pd

41W

Maximum Gate Source Voltage Vgs

20V

Typical Gate Charge Qg @ Vgs

9.4nC

Forward Voltage Vf

0.9V

Maximum Operating Temperature

150°C

Length

6.73mm

Width

6.22mm

Standards/Approvals

No

Height

2.41mm

Automotive Standard

No

Infineon IPD Series MOSFET, 600V Drain Source Voltage, 41W Maximum Power Dissipation - IPD60R360P7SAUMA1


This MOSFET is a high-voltage N‑channel enhancement device designed for switching and power-control applications where elevated drain‑source voltage and moderate current capability are required. It operates across a wide temperature range and is supplied in a surface-mount package suitable for Compact power assemblies.

Features and Benefits:


• 600V drain‑source rating enabling high-voltage switching
• 9A continuous drain current supporting moderate load currents
• 360mΩ Rds(on) minimises conduction losses during operation
• 9.4nC gate charge for reduced switching drive requirements
• 41W power dissipation allowing substantial thermal loading
• 20V gate‑source limit permitting wide gate‑drive ranges

Applications


• Suitable for high-voltage power converters and inverters
• Used for switch elements in motor-drive stages
• Ideal for industrial power-supply switching duties
• Can be used for half-bridge and clamp circuits
• Used with discrete power assemblies in Compact SMD designs

What thermal range can this device withstand?


It is specified to operate from −40°C up to 150°C to accommodate harsh thermal environments.

What package type and mounting style are provided?


The device is supplied in a TO‑252 package configured for surface mounting to suit PCB power layouts.

How does the forward voltage affect conduction behaviour?


The forward voltage is 0.9V, which influences low-side conduction drop during forward current flow.

What gate drive limitations must be observed?


Gate‑source voltage must not exceed 20V to prevent gate oxide stress.

How many external connections does it present?


The component has three pins for gate, drain and source connections.

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