Infineon CoolMOS CFDA N-Channel MOSFET, 22.4 A, 650 V Enhancement, 3-Pin TO-220
- RS庫存編號:
- 217-2562
- 製造零件編號:
- IPP65R150CFDAAKSA1
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
查看批量定價選項小計（1 管，共 50 件）*
HK$1,116.70
訂單超過 HK$250.00 免費送貨
最後的 RS 庫存
- 最終 800 個，準備發貨
單位 | 每單位 | 每管* |
|---|---|---|
| 50 - 50 | HK$22.334 | HK$1,116.70 |
| 100 - 150 | HK$21.848 | HK$1,092.40 |
| 200 + | HK$21.36 | HK$1,068.00 |
* 參考價格
- RS庫存編號:
- 217-2562
- 製造零件編號:
- IPP65R150CFDAAKSA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 22.4A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | CoolMOS CFDA | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 150mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -40°C | |
| Maximum Power Dissipation Pd | 195.3W | |
| Forward Voltage Vf | 900mV | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 15nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Width | 5.21mm | |
| Height | 41.42mm | |
| Length | 16.13mm | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 22.4A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series CoolMOS CFDA | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 150mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -40°C | ||
Maximum Power Dissipation Pd 195.3W | ||
Forward Voltage Vf 900mV | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 15nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Width 5.21mm | ||
Height 41.42mm | ||
Length 16.13mm | ||
Automotive Standard AEC-Q101 | ||
The Infineon 650V CoolMOS™ CFDA Superjunction (SJ) MOSFET is Infineon's second generation of market leading automotive qualified high voltage CoolMOS™ power MOSFETs. In addition to the well-known attributes of high quality and reliability required by the automotive industry, the 650V CoolMOS™ CFDA series provides also an integrated fast body diode.
First 650V automotive qualified technology with integrated fast body diode on the market
Limited voltage overshoot during hard commutation – self limiting di/dt and dv/dt
Low gate charge value Q g
Low Q rr at repetitive commutation on body diode & low Q oss
Reduced turn on and turn of delay times
Compliant to AEC Q101 standard
相关链接
- Infineon CoolMOS CFDA N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220 IPP65R150CFDAAKSA1
- Infineon CoolMOS N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220 IPP60R120C7XKSA1
- Infineon CoolMOS N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220 IPP60R099C7XKSA1
- Infineon CoolMOS N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220 IPP60R070CFD7XKSA1
- Infineon CoolMOS N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220 IPA60R099P6XKSA1
- Infineon CoolMOS N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220 IPA60R180C7XKSA1
- Infineon CoolMOS N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220 IPP60R145CFD7XKSA1
- Infineon CoolMOS N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220 IPP65R110CFDAAKSA1