Infineon CoolMOS N-Channel MOSFET, 19 A, 650 V Enhancement, 3-Pin TO-220 IPP60R120C7XKSA1

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小計(1 管,共 50 件)*

HK$1,080.60

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50 - 100HK$21.612HK$1,080.60
150 - 200HK$20.778HK$1,038.90
250 +HK$20.518HK$1,025.90

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RS庫存編號:
222-4701
製造零件編號:
IPP60R120C7XKSA1
製造商:
Infineon
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品牌

Infineon

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

19A

Maximum Drain Source Voltage Vds

650V

Package Type

TO-220

Series

CoolMOS

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

120mΩ

Channel Mode

Enhancement

Forward Voltage Vf

900mV

Typical Gate Charge Qg @ Vgs

34nC

Maximum Gate Source Voltage Vgs

20V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

92W

Maximum Operating Temperature

150°C

Width

15.95mm

Height

4.57mm

Length

10.36mm

Standards/Approvals

No

Automotive Standard

No

The Infineon MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.

Pb-free lead plating; RoHS compliant

Superior thermal resistance 100% avalanche tested

Halogen-free according to IEC61249-2-23

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