Infineon HEXFET Type N-Channel MOSFET, 119 A, 40 V, 3-Pin TO-252

此圖片僅供參考,請參閲產品詳細資訊及規格

可享批量折扣
查看批量定價選項

小計(1 卷,共 2000 件)*

HK$10,766.00

Add to Basket
選擇或輸入數量
有庫存
  • 加上 2,000 件從 2026年6月08日 起發貨
**需要更多嗎?**輸入您需要的數量,然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。

單位
每單位
每卷*
2000 - 2000HK$5.383HK$10,766.00
4000 - 6000HK$5.275HK$10,550.00
8000 +HK$5.169HK$10,338.00

* 參考價格

RS庫存編號:
217-2623
製造零件編號:
IRFR4104TRPBF
製造商:
Infineon
透過選取一個或多個屬性來查找類似產品。
選取全部

品牌

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

119A

Maximum Drain Source Voltage Vds

40V

Package Type

TO-252

Series

HEXFET

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

5.5mΩ

Maximum Power Dissipation Pd

140W

Typical Gate Charge Qg @ Vgs

89nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Length

6.73mm

Height

6.22mm

Standards/Approvals

No

Automotive Standard

No

The Infineon HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.

Advanced Process Technology

Ultra Low On-Resistance 1

75°C Operating Temperature

Fast Switching R

repetitive Avalanche Allowed up to Tjmax L

ead-Free

相关链接

第一時間了解我們的最新產品和優惠

電郵

您在訂閱此郵件時提供的個人信息將根據《隱私政策》進行處理。