Infineon OptiMOS 5 N-Channel MOSFET, 114 A, 150 V N, 3-Pin TO-263
- RS庫存編號:
- 218-3030
- 製造零件編號:
- IPB073N15N5ATMA1
- 製造商:
- Infineon
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HK$19,548.00
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單位 | 每單位 | 每卷* |
|---|---|---|
| 1000 - 4000 | HK$19.548 | HK$19,548.00 |
| 5000 + | HK$19.157 | HK$19,157.00 |
* 參考價格
- RS庫存編號:
- 218-3030
- 製造零件編號:
- IPB073N15N5ATMA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 114A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Package Type | TO-263 | |
| Series | OptiMOS 5 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 7.3mΩ | |
| Channel Mode | N | |
| Maximum Power Dissipation Pd | 214W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.1V | |
| Maximum Operating Temperature | +175°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 114A | ||
Maximum Drain Source Voltage Vds 150V | ||
Package Type TO-263 | ||
Series OptiMOS 5 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 7.3mΩ | ||
Channel Mode N | ||
Maximum Power Dissipation Pd 214W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.1V | ||
Maximum Operating Temperature +175°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
Infineon OptiMOS 5 Series MOSFET, 150V Drain Source Voltage, 114A Continuous Drain Current - IPB073N15N5ATMA1
This MOSFET is a high-power semiconductor device designed for switching and power management in demanding electronic systems. It operates as an N-channel transistor in a surface-mount TO-263 package, intended for applications requiring substantial current delivery and heat handling across a wide temperature range.
Features and Benefits:
• 150 V drain rating for high-voltage switching capability
• 114 A continuous drain current for heavy-load operation
• 7.3 mΩ Rds(on) for reduced conduction losses
• 214 W power dissipation enabling sustained thermal load
• 1.1 V forward voltage yielding efficient conduction behaviour
• 20 V gate tolerance allowing robust gate-drive margins
• 114 A continuous drain current for heavy-load operation
• 7.3 mΩ Rds(on) for reduced conduction losses
• 214 W power dissipation enabling sustained thermal load
• 1.1 V forward voltage yielding efficient conduction behaviour
• 20 V gate tolerance allowing robust gate-drive margins
Applications
• Suitable for DC-DC converters in power supplies
• Ideal for motor-drive stages requiring high current
• Used with power-management modules in industrial systems
• Can be used for synchronous rectification in converters
• Suitable for high-voltage switching in telecommunications equipment
• Ideal for motor-drive stages requiring high current
• Used with power-management modules in industrial systems
• Can be used for synchronous rectification in converters
• Suitable for high-voltage switching in telecommunications equipment
What gate voltage range can I apply safely?
The device accepts up to 20 V between gate and source without exceeding its specified gate tolerance.
What thermal extremes can the device withstand during operation?
It is rated to operate from −55 °C up to +175 °C across its specified thermal range.
How does the package influence board assembly and cooling?
The TO-263 surface-mount format permits soldered thermal contact to copper planes for heat spreading and automated pick-and-place mounting.
What channel conduction type and orientation does it use?
It employs an N-type channel configured for standard enhancement-mode switching in power circuits.
相关链接
- Infineon OptiMOS 5 Type N-Channel MOSFET 150 V N, 3-Pin TO-263 IPB073N15N5ATMA1
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