Infineon 500V CoolMOS CE N-Channel MOSFET, 4.8 A, 500 V N, 3-Pin TO-252 IPD50R1K4CEAUMA1

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小計(1 卷,共 2500 件)*

HK$4,395.00

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2500 - 10000HK$1.758HK$4,395.00
12500 +HK$1.722HK$4,305.00

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RS庫存編號:
218-3046
製造零件編號:
IPD50R1K4CEAUMA1
製造商:
Infineon
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品牌

Infineon

Product Type

MOSFET

Channel Type

N

Maximum Continuous Drain Current Id

4.8A

Maximum Drain Source Voltage Vds

500V

Series

500V CoolMOS CE

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

1.4Ω

Channel Mode

N

Maximum Power Dissipation Pd

25W

Maximum Gate Source Voltage Vgs

20V

Forward Voltage Vf

830mV

Typical Gate Charge Qg @ Vgs

8.2nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

No

Width

6.22mm

Length

6.73mm

Height

2.41mm

Automotive Standard

No

The Infineon 500V CoolMOS™ CE series N-channel power MOSFET. The CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. This series provides all benefits of a fast switching superjunction MOSFET while not sacrificing ease of use and offering the best cost down performance ratio available on the market.

Very high commutation ruggedness

Easy to use/drive

Pb-free plating, Halogen free mold compound

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