Infineon 600V CoolMOS P7 Type N-Channel MOSFET, 18 A, 600 V, 3-Pin TO-247
- RS庫存編號:
- 218-3086
- 製造零件編號:
- IPW60R180P7XKSA1
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 管，共 30 件）*
HK$461.40
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單位 | 每單位 | 每管* |
|---|---|---|
| 30 - 30 | HK$15.38 | HK$461.40 |
| 60 - 90 | HK$15.043 | HK$451.29 |
| 120 + | HK$14.71 | HK$441.30 |
* 參考價格
- RS庫存編號:
- 218-3086
- 製造零件編號:
- IPW60R180P7XKSA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 18A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | 600V CoolMOS P7 | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 180mΩ | |
| Forward Voltage Vf | 0.9V | |
| Maximum Power Dissipation Pd | 72W | |
| Typical Gate Charge Qg @ Vgs | 25nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 21.1mm | |
| Standards/Approvals | No | |
| Length | 16.13mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 18A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series 600V CoolMOS P7 | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 180mΩ | ||
Forward Voltage Vf 0.9V | ||
Maximum Power Dissipation Pd 72W | ||
Typical Gate Charge Qg @ Vgs 25nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Height 21.1mm | ||
Standards/Approvals No | ||
Length 16.13mm | ||
Automotive Standard No | ||
The Infineon 600V CoolMOS™ series N-channel power MOSFET. The 600V CoolMOS™ P7 super junction (SJ) MOSFET is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process.
Suitable for hard and soft switching (PFC and LLC) due to an outstanding commutation ruggedness
Significant reduction of switching and conduction losses
Excellent ESD robustness >2kV (HBM) for all products
相关链接
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