Infineon OptiMOS 5 N-Channel MOSFET & Diode, 170 A, 100 V Enhancement, 3-Pin TO-263 IPB033N10N5LFATMA1

RS庫存編號:: 220-7379
製造零件編號:: IPB033N10N5LFATMA1
製造商:: Infineon

Infineon OptiMOS 5 N-Channel MOSFET & Diode, 170 A, 100 V Enhancement, 3-Pin TO-263 IPB033N10N5LFATMA1

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HK$23,161.00

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1000 - 4000	HK$23.161	HK$23,161.00
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RS庫存編號:: 220-7379
製造零件編號:: IPB033N10N5LFATMA1
製造商:: Infineon

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產品詳細資訊

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選取全部	屬性	值
	品牌	Infineon
	Channel Type	N
	Product Type	MOSFET & Diode
	Maximum Continuous Drain Current Id	170A
	Maximum Drain Source Voltage Vds	100V
	Series	OptiMOS 5
	Package Type	TO-263
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	3.3mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	20V
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	179W
	Forward Voltage Vf	1.2V
	Maximum Operating Temperature	+150°C
	Standards/Approvals	No
	Automotive Standard	No

	選取全部
	品牌 Infineon
	Channel Type N
	Product Type MOSFET & Diode
	Maximum Continuous Drain Current Id 170A
	Maximum Drain Source Voltage Vds 100V
	Series OptiMOS 5
	Package Type TO-263
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 3.3mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 20V
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 179W
	Forward Voltage Vf 1.2V
	Maximum Operating Temperature +150°C
	Standards/Approvals No
	Automotive Standard No

Datasheet - IPB033N10N5LFATMA1

Infineon OptiMOS 5 Series MOSFET & Diode, 100V Maximum Drain Source Voltage, 170A Maximum Continuous Drain Current - IPB033N10N5LFATMA1

This MOSFET & diode is a surface-mount power device intended for high-current switching in demanding thermal environments. It combines an N-channel enhancement device with an integral diode in a TO-263 package, providing a Compact solution for power conversion and switching tasks across a wide temperature span.

Features and Benefits:

• 100 V rating enables operation in medium-voltage systems
• 3.3 mΩ RDS(on) reduces conduction losses under heavy load
• 170 A continuous drain current supports high-current applications
• 179 W power dissipation allows sustained high-power operation
• 1.2 V forward diode voltage minimises switching losses
• 20 V gate tolerance permits flexible gate-drive voltages

Applications

• Suitable for server power-supply primary switching
• Ideal for synchronous rectification in converters
• Used for motor-drive half-bridge stages
• Can be used for battery-management high-current paths
• Used with DC-DC converters requiring low conduction loss

What ambient temperature range can it handle during operation?

It is specified to operate from −55 °C up to +150 °C.

What package and mounting style should designers plan for?

It is supplied in a TO-263 package intended for surface mounting on PCB assemblies.

How does the device suit high-current thermal designs?

The combination of a 170 A continuous current rating and 179 W maximum dissipation permits use in designs where substantial heat must be managed through PCB copper and thermal pads.

What gate-drive constraints must be observed?

The gate-source voltage must not exceed 20 V to remain within safe operating limits.

Which conduction characteristic impacts power-loss calculations?

The low drain-source resistance of 3.3 mΩ is the key parameter for estimating conduction losses at operating current.