Infineon OptiMOS 5 N-Channel MOSFET & Diode, 100 A, 40 V Enhancement, 8-Pin TDSON
- RS庫存編號:
- 220-7399
- 製造零件編號:
- IPC100N04S5L1R1ATMA1
- 製造商:
- Infineon
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可享批量折扣
查看批量定價選項小計（1 卷，共 5000 件）*
HK$38,520.00
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單位 | 每單位 | 每卷* |
|---|---|---|
| 5000 - 20000 | HK$7.704 | HK$38,520.00 |
| 25000 + | HK$7.55 | HK$37,750.00 |
* 參考價格
- RS庫存編號:
- 220-7399
- 製造零件編號:
- IPC100N04S5L1R1ATMA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET & Diode | |
| Maximum Continuous Drain Current Id | 100A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | TDSON | |
| Series | OptiMOS 5 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.1mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 105nC | |
| Maximum Gate Source Voltage Vgs | 16V | |
| Maximum Power Dissipation Pd | 150W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.1V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Width | 5.58mm | |
| Height | 1.1mm | |
| Length | 5.25mm | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type N | ||
Product Type MOSFET & Diode | ||
Maximum Continuous Drain Current Id 100A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type TDSON | ||
Series OptiMOS 5 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.1mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 105nC | ||
Maximum Gate Source Voltage Vgs 16V | ||
Maximum Power Dissipation Pd 150W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.1V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Width 5.58mm | ||
Height 1.1mm | ||
Length 5.25mm | ||
Automotive Standard AEC-Q101 | ||
The Infineon offers a wide range of 20V-40V N-channel automotive qualified power MOSFETs using the new OptiMOS technology in a variety of packages to meet a range of needs and achieving RDS(on) down to 0.6mΩ.The new OptiMOS 6 and Optimos5 40V benchmark MOSFET technology enables low conduction losses (best in Class RDSon performance), low switching losses (improved switching behaviour), improved diode recovery and EMC behaviour. This MOSFET technology is used in the most advanced and innovative packages in order to reach the best product performances and quality. For ultimate design flexibility, automotive-qualified MOSFETs are available in a variety of packages to meet a range of needs. Infineon offer customers a steady stream of improvements in current capability, switching behaviour, reliability, package size and overall quality. The newly developed integrated half-bridge is an innovative and cost efficient package solution for motor drive and body applications.
OptiMOS™ - power MOSFET for automotive applications
N-channel - Enhancement mode - Logic Level
MSL1 up to 260°C peak reflow
175°C operating temperature
相关链接
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