Infineon OptiMOS Type P-Channel MOSFET & Diode, 70 A, 40 V Enhancement, 3-Pin TO-252
- RS庫存編號:
- 220-7410
- 製造零件編號:
- IPD70P04P4L08ATMA2
- 製造商:
- Infineon
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可享批量折扣
查看批量定價選項小計(1 卷,共 2500 件)*
HK$11,425.00
訂單超過 HK$250.00 免費送貨
有庫存
- 2,500 件準備從其他地點送貨
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單位 | 每單位 | 每卷* |
|---|---|---|
| 2500 - 2500 | HK$4.57 | HK$11,425.00 |
| 5000 - 7500 | HK$4.479 | HK$11,197.50 |
| 10000 + | HK$4.345 | HK$10,862.50 |
* 參考價格
- RS庫存編號:
- 220-7410
- 製造零件編號:
- IPD70P04P4L08ATMA2
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET & Diode | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 70A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | TO-252 | |
| Series | OptiMOS | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 7.8mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 5V | |
| Forward Voltage Vf | -1.3V | |
| Typical Gate Charge Qg @ Vgs | 71nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 75W | |
| Maximum Operating Temperature | 175°C | |
| Length | 6.73mm | |
| Height | 2.41mm | |
| Standards/Approvals | No | |
| Width | 6.22mm | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET & Diode | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 70A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type TO-252 | ||
Series OptiMOS | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 7.8mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 5V | ||
Forward Voltage Vf -1.3V | ||
Typical Gate Charge Qg @ Vgs 71nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 75W | ||
Maximum Operating Temperature 175°C | ||
Length 6.73mm | ||
Height 2.41mm | ||
Standards/Approvals No | ||
Width 6.22mm | ||
Automotive Standard AEC-Q101 | ||
Infineon OptiMOS Series MOSFET & Diode, 40V Maximum Drain Source Voltage, 70A Maximum Continuous Drain Current - IPD70P04P4L08ATMA2
This MOSFET & diode is a P‑channel enhancement device integrating a fast recovery diode for power switching in automotive and industrial environments. It is designed for surface‑mount applications and operates across an extended temperature span for demanding duty cycles.
Features and Benefits:
• 40V maximum drain‑source voltage enables medium‑voltage switching
• 7.8mΩ Rds(on) reduces conduction losses under high current
• 70A continuous drain current supports heavy load handling
• 75W maximum power dissipation allows sustained power delivery
• 71nC typical gate charge minimises switching energy losses
• AEC‑Q101 qualification meets automotive component stress standards
• 7.8mΩ Rds(on) reduces conduction losses under high current
• 70A continuous drain current supports heavy load handling
• 75W maximum power dissipation allows sustained power delivery
• 71nC typical gate charge minimises switching energy losses
• AEC‑Q101 qualification meets automotive component stress standards
Applications
• Suitable for automotive power distribution modules
• Ideal for DC-DC converters in vehicle electronics
• Used with motor drive stages requiring fast recovery diode
• Can be used for load switches in battery management systems
• Suitable for high‑current power stages on surface‑mount boards
• Ideal for DC-DC converters in vehicle electronics
• Used with motor drive stages requiring fast recovery diode
• Can be used for load switches in battery management systems
• Suitable for high‑current power stages on surface‑mount boards
What gate voltage range is acceptable for control?
The maximum gate‑source voltage is 5V and the device is intended for low‑voltage gate drive.
What thermal extremes can the device tolerate?
It is specified to operate between -55°C and 175°C for wide thermal margin.
What package and mounting style does it use?
The component is supplied in a TO‑252 package intended for surface mounting.
How many pins are available for PCB connection?
It has three electrical pins for drain, source and gate connections.
相关链接
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