onsemi NTBGS1D N-Channel MOSFET, 267 A, 60 V Enhancement, 7-Pin TO-263
- RS庫存編號:
- 221-6699
- 製造零件編號:
- NTBGS1D5N06C
- 製造商:
- onsemi
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
查看批量定價選項小計（1 卷，共 800 件）*
HK$21,725.60
库存信息目前无法访问 - 请稍候查看
單位 | 每單位 | 每卷* |
|---|---|---|
| 800 - 800 | HK$27.157 | HK$21,725.60 |
| 1600 - 1600 | HK$26.614 | HK$21,291.20 |
| 2400 + | HK$26.082 | HK$20,865.60 |
* 參考價格
- RS庫存編號:
- 221-6699
- 製造零件編號:
- NTBGS1D5N06C
- 製造商:
- onsemi
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 267A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | NTBGS1D | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 1.55mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 78.6nC | |
| Maximum Power Dissipation Pd | 211W | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.2mm | |
| Width | 4.7mm | |
| Standards/Approvals | RoHS | |
| Height | 15.7mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 267A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series NTBGS1D | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 1.55mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 78.6nC | ||
Maximum Power Dissipation Pd 211W | ||
Maximum Operating Temperature 175°C | ||
Length 10.2mm | ||
Width 4.7mm | ||
Standards/Approvals RoHS | ||
Height 15.7mm | ||
Automotive Standard No | ||
The ON Semiconductor 60V of power MOSFET used 267A of drain current with single N−channel. It has lower switching noise/EMI and minimize conduction losses.
Low RDS(on) to minimize conduction losses
Low capacitance to minimize driver losses
相关链接
- onsemi NTBGS1D N-Channel MOSFET 60 V Enhancement, 7-Pin TO-263 NTBGS1D5N06C
- onsemi NTMTS N-Channel MOSFET 100 V Enhancement, 8-Pin TDFN
- onsemi NTMTS N-Channel MOSFET 100 V Enhancement, 8-Pin TDFN NTMTSC1D6N10MCTXG
- onsemi PowerTrench N-Channel MOSFET 60 V Enhancement, 3-Pin TO-263
- onsemi PowerTrench N-Channel MOSFET 60 V Enhancement, 3-Pin TO-263
- onsemi NVB N-Channel MOSFET 1.2 kV Enhancement, 7-Pin TO-263
- onsemi NTBGS3D N-Channel MOSFET 60 V Enhancement, 7-Pin TO-263
- onsemi NTBGS N-Channel MOSFET 60 V Enhancement, 7-Pin TO-263