onsemi NVMFS5C N-Channel MOSFET, 268 A, 40 V Enhancement, 5-Pin DFN
- RS庫存編號:
- 221-6755
- 製造零件編號:
- NVMFS5C420NT1G
- 製造商:
- onsemi
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
查看批量定價選項小計（1 卷，共 1500 件）*
HK$21,726.00
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單位 | 每單位 | 每卷* |
|---|---|---|
| 1500 - 6000 | HK$14.484 | HK$21,726.00 |
| 7500 + | HK$14.194 | HK$21,291.00 |
* 參考價格
- RS庫存編號:
- 221-6755
- 製造零件編號:
- NVMFS5C420NT1G
- 製造商:
- onsemi
規格
產品概覽和技術數據資料表
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 268A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | DFN | |
| Series | NVMFS5C | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 1.1mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 150W | |
| Typical Gate Charge Qg @ Vgs | 82nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 175°C | |
| Length | 6.3mm | |
| Height | 5.3mm | |
| Width | 1.1mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 268A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type DFN | ||
Series NVMFS5C | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 1.1mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 150W | ||
Typical Gate Charge Qg @ Vgs 82nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 175°C | ||
Length 6.3mm | ||
Height 5.3mm | ||
Width 1.1mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The ON Semiconductor automotive power MOSFET in a 5x6mm flat lead package designed for compact and efficient designs and including high thermal performance. It available for Enhanced Optical Inspection. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.
Low RDS(on) to minimize conduction losses
Low QG and capacitance to minimize driver losses
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