Infineon CoolMOS N-Channel MOSFET, 37.9 A, 650 V Enhancement, 3-Pin TO-220 IPA60R099P6XKSA1
- RS庫存編號:
- 222-4639
- 製造零件編號:
- IPA60R099P6XKSA1
- 製造商:
- Infineon
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可享批量折扣
查看批量定價選項小計（1 管，共 50 件）*
HK$1,182.10
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單位 | 每單位 | 每管* |
|---|---|---|
| 50 - 100 | HK$23.642 | HK$1,182.10 |
| 150 - 200 | HK$22.732 | HK$1,136.60 |
| 250 + | HK$22.444 | HK$1,122.20 |
* 參考價格
- RS庫存編號:
- 222-4639
- 製造零件編號:
- IPA60R099P6XKSA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 37.9A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-220 | |
| Series | CoolMOS | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 99mΩ | |
| Channel Mode | Enhancement | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 37.9A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-220 | ||
Series CoolMOS | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 99mΩ | ||
Channel Mode Enhancement | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon design of Cool MOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. Cool MOS™ P6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The offered devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter and cooler.
Increased MOSFET dv/dt ruggedness
Extremely low losses due to very low FOM Rdson*Qg and Eoss
Very high commutation ruggedness
Pb-free plating Halogen free mold compound
相关链接
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