Infineon CoolMOS N-Channel MOSFET, 120 A, 80 V Enhancement, 3-Pin TO-220 IPP020N08N5AKSA1
- RS庫存編號:
- 222-4691
- 製造零件編號:
- IPP020N08N5AKSA1
- 製造商:
- Infineon
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HK$101.20
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單位 | 每單位 | 每包* | 節省 |
|---|---|---|---|
| 2 - 8 | HK$50.60 | HK$101.20 | - |
| 10 - 98 | HK$49.55 | HK$99.10 | HK$10.50 |
| 100 - 248 | HK$48.70 | HK$97.40 | HK$190.00 |
| 250 - 498 | HK$47.85 | HK$95.70 | HK$687.50 |
| 500 + | HK$47.05 | HK$94.10 | HK$1,775.00 |
* 參考價格
- RS庫存編號:
- 222-4691
- 製造零件編號:
- IPP020N08N5AKSA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 120A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Series | CoolMOS | |
| Package Type | TO-220 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 2mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 375W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 178nC | |
| Maximum Operating Temperature | 175°C | |
| Width | 15.95mm | |
| Standards/Approvals | No | |
| Length | 10.36mm | |
| Height | 4.57mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 120A | ||
Maximum Drain Source Voltage Vds 80V | ||
Series CoolMOS | ||
Package Type TO-220 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 2mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 375W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 178nC | ||
Maximum Operating Temperature 175°C | ||
Width 15.95mm | ||
Standards/Approvals No | ||
Length 10.36mm | ||
Height 4.57mm | ||
Automotive Standard No | ||
The Infineon MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals
Pb-free lead plating; RoHS compliant
Superior thermal resistance 100% avalanche tested
Halogen-free according to IEC61249-2-23
相关链接
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