Infineon CoolMOS N-Channel MOSFET, 31 A, 650 V Enhancement, 3-Pin TO-220 IPP60R070CFD7XKSA1

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HK$115.60

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2 - 8HK$57.80HK$115.60
10 - 98HK$56.80HK$113.60
100 - 248HK$55.75HK$111.50
250 - 498HK$54.75HK$109.50
500 +HK$53.75HK$107.50

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包裝方式:
RS庫存編號:
222-4698
製造零件編號:
IPP60R070CFD7XKSA1
製造商:
Infineon
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品牌

Infineon

Product Type

MOSFET

Channel Type

N

Maximum Continuous Drain Current Id

31A

Maximum Drain Source Voltage Vds

650V

Series

CoolMOS

Package Type

TO-220

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

70mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

156W

Forward Voltage Vf

1V

Maximum Gate Source Voltage Vgs

20V

Typical Gate Charge Qg @ Vgs

67nC

Maximum Operating Temperature

150°C

Length

10.36mm

Height

4.57mm

Width

15.95mm

Standards/Approvals

No

Automotive Standard

No

The Infineon MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.

Pb-free lead plating; RoHS compliant

Superior thermal resistance 100% avalanche tested

Halogen-free according to IEC61249-2-23

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