Infineon CoolMOS N-Channel MOSFET, 31.2 A, 650 V Enhancement, 3-Pin TO-220 IPP65R110CFDAAKSA1

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小計(1 管,共 50 件)*

HK$1,811.70

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50 - 100HK$36.234HK$1,811.70
150 - 200HK$34.84HK$1,742.00
250 +HK$34.40HK$1,720.00

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RS庫存編號:
222-4706
製造零件編號:
IPP65R110CFDAAKSA1
製造商:
Infineon
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品牌

Infineon

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

31.2A

Maximum Drain Source Voltage Vds

650V

Package Type

TO-220

Series

CoolMOS

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

110mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

110nC

Maximum Gate Source Voltage Vgs

20V

Maximum Power Dissipation Pd

277.8W

Forward Voltage Vf

900mV

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

150°C

Width

15.95mm

Standards/Approvals

No

Height

4.57mm

Length

10.36mm

Automotive Standard

AEC-Q101

The Infineon MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.

Pb-free lead plating; RoHS compliant

Superior thermal resistance 100% avalanche tested

Halogen-free according to IEC61249-2-23

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