Infineon IPL60R Type N-Channel MOSFET, 19 A, 600 V Enhancement, 5-Pin ThinPAK IPL60R185P7AUMA1
- RS庫存編號:
- 222-4916
- 製造零件編號:
- IPL60R185P7AUMA1
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 5 件）*
HK$119.50
訂單超過 HK$250.00 免費送貨
暫時缺貨
- 從 2027年1月28日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 5 | HK$23.90 | HK$119.50 |
| 10 - 95 | HK$23.48 | HK$117.40 |
| 100 - 245 | HK$23.06 | HK$115.30 |
| 250 - 495 | HK$22.64 | HK$113.20 |
| 500 + | HK$22.24 | HK$111.20 |
* 參考價格
- RS庫存編號:
- 222-4916
- 製造零件編號:
- IPL60R185P7AUMA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 19A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | ThinPAK | |
| Series | IPL60R | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 185mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.9V | |
| Minimum Operating Temperature | -40°C | |
| Typical Gate Charge Qg @ Vgs | 25nC | |
| Maximum Power Dissipation Pd | 81W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 1.1mm | |
| Length | 8.1mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 19A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type ThinPAK | ||
Series IPL60R | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 185mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.9V | ||
Minimum Operating Temperature -40°C | ||
Typical Gate Charge Qg @ Vgs 25nC | ||
Maximum Power Dissipation Pd 81W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 1.1mm | ||
Length 8.1mm | ||
Automotive Standard No | ||
The Infineon 600V CoolMOS™ P7 is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the CoolMOS™ 7th generation platform ensure its high efficiency.
ESD ruggedness of ≥ 2kV (HBM class 2)
Integrated gate resistor R G
Rugged body diode
Wide portfolio in through hole and surface mount packages
Both standard grade and industrial grade parts are available
相关链接
- Infineon IPL60R Type N-Channel MOSFET 600 V Enhancement, 5-Pin ThinPAK
- Infineon IPL60R Type N-Channel MOSFET 600 V Enhancement, 5-Pin ThinPAK
- Infineon IPL60R Type N-Channel MOSFET 600 V Enhancement, 5-Pin ThinPAK
- Infineon IPL60R Type N-Channel MOSFET 600 V Enhancement, 5-Pin ThinPAK IPL60R075CFD7AUMA1
- Infineon IPL60R Type N-Channel MOSFET 600 V Enhancement, 5-Pin ThinPAK IPL60R125C7AUMA1
- Infineon IPL60R Type N-Channel MOSFET 650 V Enhancement, 5-Pin ThinPAK
- Infineon IPL60R Type N-Channel MOSFET 650 V Enhancement, 5-Pin ThinPAK
- Infineon IPL60R Type N-Channel MOSFET 650 V Enhancement, 5-Pin ThinPAK IPL65R195C7AUMA1